Tara P. Mishra

Tara P. Mishra

PhD student

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Tara is now a postdoctoral research fellow in the group of Prof. Gerbrand Ceder at the University of California at Berkeley and the Lawerence Berkeley National Laboratory.

I have recently graduated (July 2022) under the Singapore (NUS) – MIT Alliance for Research and Technology (SMART). I was co-advised by Prof. Stephen Pennycook (NUS) and Prof. Silvija Gradecak (MIT).

My broad area of interest is the synergistic investigation of materials using atomically resolved microscopy and computational materials science. In 2018, I completed my undergraduate studies in Materials at the Indian Institute of Science, Bangalore (IISc, Bangalore). During my bachelor’s, I worked as a research intern at the Japan Advanced Institute of Science and Technology (2016) in the determination of thermal vibration from atomically resolved microscopy imaging. For my final year bachelor’s project at IISc, I worked on three-dimensional structure reconstruction from a single projection atomic resolved microscopy image. I love coding in multiple coding languages, such as Python, MATLAB, JAVA, and CUDA C. In my free time, I enjoy reading books and playing Squash.

Publications

7. Nanoscale Optical Inhomogeneities from Compositional Segregation within Individual GaN-on-Si Quantum Wells, Adv. Sci., 0:e76414 (2026).

6. Structure and exfoliation mechanism of two-dimensional boron nanosheets, Nature Comm., 15 6122 (2024).

5. Kinetic Monte Carlo Simulations of Sodium Ion Transport in NaSICON Electrodes, ACS Materials Lett., 229, 2499 (2023).

4. kMCpy: A Python Package to Simulate Transport Properties in Solids with Kinetic Monte Carlo, Comput. Mater. Sci., 229, 112394 (2023).

3. Fundamental investigations on the sodium-ion transport properties of mixed polyanion solid-state battery electrolytes, Nat. Commun., 13, 4470 (2022).

2. Design and Characterization of Host Frameworks for Facile Magnesium Transport, Annu. Rev. Mater. Res., 52: 6.1-6.30 (2022).

1. Unlocking the origin of compositional fluctuations in InGaN light emitting diodes, Phys. Rev. Materials 5, 024605 (2021).